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| Preliminary data SPI21N10 SPP21N10,SPB21N10 SIPMOS Power-Transistor Feature N-Channel Enhancement mode 175C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 80 21 P-TO220-3-1 V m A Type SPP21N10 SPB21N10 SPI21N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4116 Q67042-S4102 Q67042-S4117 Marking 21N10 21N10 21N10 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 21 15.0 Unit A Pulsed drain current TC=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg 84 130 6 20 90 -55... +175 55/175/56 mJ kV/s V W C Avalanche energy, single pulse ID =21 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =21A, VDS =80V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-31 Preliminary data SPI21N10 SPP21N10,SPB21N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area F) Symbol min. RthJC RthJA RthJA - Values typ. max. 1.7 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 100 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = VDS ID = 44 A Zero gate voltage drain current VDS =100V, VGS=0V, Tj =25C VDS =100V, VGS=0V, Tj =125C A 0.01 1 1 65 1 100 100 80 nA m Gate-source leakage current VGS =20V, VDS =0V Drain-source on-state resistance VGS =10V, ID =15.0A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-31 Preliminary data SPI21N10 SPP21N10,SPB21N10 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =15.0A Symbol Conditions min. Values typ. 12.4 650 140 80 10 56 37 23 max. 865 186 120 15 84 55 35 Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS=25V, f=1MHz VDD =50V, VGS =10V, ID =21A, RG =13 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =80V, ID =21A, VGS =0 to 10V VDD =80V, ID =21A V(plateau) VDD =80V, ID=21A Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =21A VR =50V, IF =lS , diF /dt=100A/s IS ISM TC=25C Page 3 Transconductance gfs VDS 2*ID*RDS(on)max , 6.5 - S pF ns - 3.9 15.5 28.9 6.2 5.2 23.3 38.4 - nC V - 0.94 65 153 21 84 1.25 81.5 192 A V ns nC 2002-01-31 Preliminary data SPI21N10 SPP21N10,SPB21N10 1 Power dissipation Ptot = f (TC ) 100 SPP21N10 2 Drain current ID = f (TC ) parameter: VGS 10 V 24 SPP21N10 W A 20 18 80 70 Ptot 16 60 50 40 30 20 4 10 0 0 2 20 40 60 80 100 120 140 160 C 190 0 0 20 40 60 80 100 120 140 160 C 190 ID 14 12 10 8 6 TC 3 Safe operating area ID = f ( VDS ) 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = 0 , TC = 25 C 10 2 SPP21N10 tp = 6.8s 10 s parameter : D = tp /T 10 1 SPP21N10 K/W A 10 0 /I D 100 s ID =V DS 10 1 Z thJC DS (on ) 10 -1 R 1 ms 10 ms 10 -2 10 0 DC 10 -3 single pulse 10 -1 -1 10 10 0 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 VDS Page 4 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2002-01-31 Preliminary data SPI21N10 SPP21N10,SPB21N10 5 Typ. output characteristic ID = f (VDS ); Tj=25C 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: tp = 80 s 50 e d parameter: VGS 260 A RDS(on) VGS[V]= a= 5.6 b= 6.0 c= 7.0 d= 8.0 e= 10.0 c m 220 200 180 160 140 120 a b c d ID 30 20 b a 100 e 80 10 60 40 20 0 0 5 10 VGS[V]= a= 5.6 b= 6.0 5 10 15 c= 7.0 d= 8.0 e= 10.0 20 25 30 35 40 V 20 0 0 A 50 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 30 8 Typ. forward transconductance gfs = f(ID ); Tj=25C A g fs 3 4 5 6 8 20 ID 15 10 5 0 2 parameter: gfs 14 S 12 11 10 9 8 7 6 5 4 3 2 1 V 0 0 4 8 12 16 A 24 VGS Page 5 ID 2002-01-31 Preliminary data SPI21N10 SPP21N10,SPB21N10 9 Drain-source on-state resistance RDS(on) = f (Tj ) 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter : ID = 15.0 A, VGS = 10 V 340 SPP21N10 parameter: VGS = VDS 4 m 280 V RDS(on) 240 VGS(th) 200 160 3 ID =0.25mA 2.5 120 98% 80 40 typ 2 ID =44A 0 -60 -20 20 60 100 140 C 200 1.5 -65 -35 -5 25 55 85 115 C 175 Tj Tj 11 Typ. capacitances C = f (VDS) 12 Forward character. of reverse diode IF = f (VSD ) parameter: VGS =0V, f=1 MHz 10 4 parameter: Tj , tp = 80 s 10 2 SPP21N10 pF A 10 3 Ciss IF 10 1 C Coss 10 2 10 0 Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2002-01-31 Preliminary data SPI21N10 SPP21N10,SPB21N10 13 Typ. avalanche energy EAS = f (Tj ) 140 14 Typ. gate charge VGS = f (QGate ) mJ V 120 110 12 100 VGS EAS 90 80 70 60 50 40 30 20 10 0 25 45 65 85 105 125 145 2 C Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP21N10 120 V V (BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 C Tj Page 7 185 200 par.: ID = 21 A , VDD = 25 V, RGS = 25 parameter: ID = 21 A pulsed 16 SPP21N10 0,2 VDS max 10 0,8 VDS max 8 6 4 0 0 5 10 15 20 25 30 35 40 nC 50 QGate 2002-01-31 Preliminary data SPI21N10 SPP21N10,SPB21N10 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-31 |
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